The role of the semiconductor layer in the exchange-bias film structure of CoNi/Si/FeNi/Si with a spin spring effect

Kobyakov, A. V.; Turpanov, I. A.; Patrin, G. S. Journal of Physics VII EURO-ASIAN SYMPOSIUM TRENDS IN MAGNETISM. DOI: 10.1088/1742-6596/1389/1/012028

CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.