Magnetoimpedance Effect in a SOI-Based Structure

Smolyakov, D. A.; Tarasov, A. S.; Yakovlev, I. A.; Volochaev, M. N. Semiconductors. DOI: 10.1134/S1063782619140215

This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.