Magnetoelectric Effect in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

Pashen'kin, I. Yu; Sapozhnikov, M., V; Gusev, N. S.; с соавторами. JETP LETTERS 111, pages690–693(2020). DOI

The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of ~200% is studied. It is shown that the increase in the applied voltage from 50 mV to 1.25 V leads to a shift of the magnetization curve of the free layer by 10 Oe at a current density of ~103 A/cm2. The discovered effect can be used in the development of energy-efficient random access memory.