Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect
A. S. Tarasov, A. V. Luk’yanenko, I. A. Bondarev, I. A. Yakovlev, S. N. Varnakov, S. G. Ovchinnikov & N. V. Volkov. Phys. Lett. 46, 665–668 (2020). https://doi.org/10.1134/S1063785020070135
The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.