Effect of Electron and Hole Doping on the Transport Characteristics of Chalcogenide Systems
Romanova, O. B.; Aplesnin, S. S.; Udod, L., V/ Physics Of The Solid State/
https://doi.org/10.1134/S1063783421050152
The electrical properties of the Ag0.01Mn0.99S and Tm0.01Mn0.99S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80–400 K in a magnetic field of 12 kOe. Using the I–V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.