Plasma-Chemical Method of Silicon Carbide Modification to Obtain Particles with Controlled Surface Morphology

Shalygina, T.A., Rudenko, M.S., Nemtsev, I.V., Parfenov, V.A., Voronina, S.Y.// Technical Physics Letters//

DOI: 10.21883/TPL.2022.02.53582.19042

A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It was shown that at Ar/H = 100/0, the formation of a carbon shell is observed; at Ar/H ratios of 91/9 and 84/16, the particles are characterized by a carbon shell decorated with silicon nanoparticles or nanowires, respectively. The modified particles were analyzed using scanning electron microscopy and Raman spectroscopy. Keywords: silicon carbide, plasma chemistry, surface morphology, nanoparticles, nanowires, carbon shell, core-shell