Magnetoresistance and magnetoimpedance in holmium manganese sulfides

Romanova, O. B.; Aplesnin, S. S.; Sitnikov, M. N.; Udod, L., V; Kharkov, A. M.// Applied Physics A-materials Science & Processing//

The structure, transport characteristics, real and imaginary parts of the impedance components and electric polarization of the HoXMn1−XS (X = 0.1 and 0.2) system have been investigated in the temperature range of 80‒500 K in magnetic fields of up to 12 kOe. The morphology of synthesized samples has been studied. The influence of the magnetic field on the transport characteristics, on both direct and alternating currents of holmium manganese sulfides, have been established. The negative effects of DC magnetoresistance in the region of the magnetic phase transition and positive AC magnetoimpedance up to 4% in the paramagnetic region have been established. The critical temperatures of the existence of the electric polarization have been determined. At a substitution concentration of X = 0.1, the activation character of the relaxation time versus temperature has been found. The diffusion contribution for the composition with X = 0.2 has been established by the impedance hodograph.