Electrical Properties of the Polycrystalline BiFe0.95Co0.05O3 Films

O. B. Romanova, V. V. Kretinin, S. S. Aplesnin, M. N. Sitnikov, L. V. Udod & K. I. Yanushkevich / Physics of the Solid State

DOI: https://doi.org/10.1134/S1063783421060184

Semiconductor BiFe0.95Co0.05O3 thin-film compounds have been synthesized by a burst technique. The film surface morphology and the effect of electronic doping via substitution of cobalt ions for trivalent iron on the optical, magnetic, and kinetic properties have been investigated in the temperature range of 77–600 K in magnetic fields of up to 12 kOe. Two electron relaxation channels have been found in the impedance spectrum in the frequency range of 0.1–1000 kHz. The negative magnetoresistance in the anomalous magnetization region and the maximum magnetoimpedance in the vicinity of the surface phase transition have been established. Using the Hall measurements, carrier types dominating in the magnetoresistance and magnetoimpedance effects have been determined. The magnetization anomalies have been explained in the model of superparamagnetic clusters and the magnetoresistance, by the carrier scattering by spin fluctuations.