Mechanisms and Non-linear Problems of Nucleation and Growth of Crystals and Thin Films

The conference focuses on mechanisms of nucleation and growth of crystals and thin films, new methods and approaches for growth of crystals (including  widebandgap semiconductors like SiC, AlN, GaN, Ga2O3 etc.), physics, chemistry and mechanics of crystalline surface, origin an  statisitcs of defects during growth, as well as fundamental problems of growth (nucleation, phase transitions, theory etc.)

 

CONFERENCE TOPICS

The main topics of the conference are:

• Mechanisms of crystal formation and growth in single- and multi-component systems: theoretical description of the process, numerical modeling, experimental results.
• New methods and approaches to the description of growth and the investigation of different properties of wide-bandgap semiconductors.
• Nonlinear and collective phenomena in the process of crystal growth.
• Physics, chemistry, and mechanics of crystal surfaces
• Origin and statistics of lattice defects and their effect on the properties and growth of crystals
• Fundamental problems (nucleation theory, phase transitions etc.)